Abstract: Temperature and doping dependencies of electron drift velocity in wurtzite ZnO structure have been calculated using ensemble Monte Carlo method and compared with electron drift velocity in GaN and SiC in steady-state and transient situation. The following scattering mechanisims i.e., impurity, polar optical phonon and acoustic phonon are inculded in the calculation. The maximum electron drift velocity that is obtained in room temperature for 1023 m-3 donor concentration are 2.2x107, 3x107 cm sec-1 for ZnO and GaN, respectively. SiC shows the negative differential mobility just in low temperature. For high applied electric field transient electron drift velocity shows a significant overshoot in ZnO and GaN.
H. Arabshahi, M. Rezaee Rokn-Abadi and F. Badieyan Bagh-Siyahi, 2010. Comparison of High Field Electron Transport Properties in Wurtzite Phase of ZnO, GaN and SiC. Research Journal of Applied Sciences, 5: 215-220.