References

Boo, J.H., M.C. Kim, S.B. Lee, S.J. Parkand and J.G. Han, 2000. Growth of SiC thin films on graphite for Oxidation-protective coating. J. Vac. Sci. Technol. A. Vac. Surf. Films, 18: 1713-1717.
Direct Link  |  

Eiichi, Y., 1996. The influence of graphitic structure on oxidation reaction of carbon materials. J. Korean Ceram. Soc., 33: 816-822.
Direct Link  |  

Elhaddad, A., 2010. Growth of SiC by high temperature CVD and application of Thermo-gravimetry for an In-situ growth rate measurement. Ph.D Thesis, University of Duisburg-Essen, Germany.

Hwang, S.H., S.S. Jeon, S.J. Hong, B.C. Lee and C.W. Huh et al., 2011. A review on the VHTR PIRT development status of both regulatory authority and licensee. Proceedings of the International Conference onKorean Nuclear Society Autumn Meeting Vol. 43, October 26-28, 2011, International Atomic Energy Agency, Vienna, Austria, pp: 1-2.

Jung, Y.G., S.W. Park and S.C. Choi, 1997. Effect of CH₄ and H₂ on CVD of SiC and TiC for possible fabrication of SiC/TiC/C FGM. Mater. Lett., 30: 339-345.
CrossRef  |  Direct Link  |  

Kim, E.S. and Y.W. Kim, 2008. Thermal oxidation behaviors of candidate nuclear grade graphites for VHTR at high temperatures above 900°C. Proceedings of the International Conference on Korean Nuclear Society Spring Meeting Vol. 39, May 29-30, 2008, International Atomic Energy Agency, Vienna, Austria, pp: 1-2.

Kim, J.I., 2007. Deposition of C/SiC functionally graded materials by CVD method for the oxidation protection of C/C composites. Ph.D Thesis, Yonsei University, Seoul, South Korea.

Kim, J.W., H.T. Kim, K.J. Kim, J.H. Lee and K. Choi, 2011. Application of 3-dimensional Phase-diagram using FactSage in C₃H₈-SiCl₄-H₂ system. J. Korean Ceram. Soc., 48: 621-624.
Direct Link  |  

Kim, J.W., S.M. Jeong, H.T. Kim, K.J. Kim and J.H. Lee et al., 2011. Thermodynamic prediction of SiC deposition in C₃ H₈-SiCl₄-H₂ system. J. Korean Ceram. Soc., 48: 236-240.
CrossRef  |  Direct Link  |  

Kim, Y. and T. Chae, 2017. Oxidation resistance of silicon carbide coating by CVD. Intl. J. BioSci. Bio. Technol., 9: 1-6.

Kim, Y.T., J.T. Choi, J.K. Choi and K.H. Orr, 1995. The control of SiC/C ratio for the synthesis of SiC/C functionally gradient materials. J. Korean. Ceram. Soc., 32: 685-696.
Direct Link  |  

Kim, Y.T., S.Y. Kim and J.W. Park, 2015. Silicon carbide crack healing by chemical vapor deposition. J. Ceram. Process. Res., 16: 624-628.
Direct Link  |  

Lee, M.Y., J.Y. Park, W.J. Kim, J.I. Kim and G.W. Hong et al., 2001. Effect of total reaction pressure on the microstructure of the SiC deposited layers by low pressure chemical vapor deposition. J. Kor. Ceram. Soc., 38: 388-392.
Direct Link  |  

Myers, R.L., Y. Shishkin, O. Kordina and S.E. Saddow, 2005. High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor. J. Crystal Growth, 285: 486-490.
CrossRef  |  Direct Link  |  

Qiang, X., H. Li, Y. Zhang, Z. Wang and Z. Ba et al., 2016. Mechanical and oxidation protective properties of SiC Nanowires-toughened SiC coating prepared In-situ by a CVD process on C/C composites. Surf. Coat. Technol., 307: 91-98.
Direct Link  |  

Saketi, S. and M. Olsson, 2017. Influence of CVD and PVD coating micro topography on the initial material transfer of 316L stainless steel in sliding contacts-A laboratory study. Wear, 388: 29-38.
CrossRef  |  Direct Link  |  

Seo, J.Y., S.Y. Yoon and J.H. Kim, 2001. Deposition of 3C-SiC films by Plasma-enhanced chemical vapor deposition (1): Deposition behaviors of SiC with deposition parameters. J. Kor. Ceram. Soc., 38: 531-536.
Direct Link  |