Research Journal of Applied Sciences
Year:
2009
Volume:
4
Issue:
4
Page No.
120 - 124
References
Djeffal, F., S. Guessasma and A. Benhaya, 2005. An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETs. Semicond. Sci. Technol., 20: 158-164.
CrossRef | Illingworth, V., 1998. The Penguin Dictionary of Electronics. 3rd Edn., Penguin Books Ltd. London, ISBN: 0-14-051402-3 pp: 200-201.
Linden, K.J., 1976. GaNs schottky mixer diode with integral guard layer structure. Electron Devices IEEE. Trans., 23: 363-364.
Morkoc, H., R. Cingolani, W. Lambrecht, B. Gill and H.X. Jiana
et al., 1999. Material properties of GaN in the context of electronic devices. MRS Int. J. Nitride Semicond. Res., 41: 1-2.
Schmitz, A.C., A.T. Ping, M.A. Khan, Q. Chen, J.W. Yang and I. Adesida, 1996. Schottky barrier properties of various metals on n-type GaN. Semicond. Sci. Technol., 11: 1464-1467.
CrossRef | Shurmer, H.V., 1971. Microwave Semiconductor Devices. 1st Edn., Pitman Publishing Corp, London, ISBN: 0273418742, pp: 93-108.
Sze, S.M., 1981. Physics of Semiconductor Devices. 2nd Edn., John Wiley and Sons Inc., New York, ISBN: 9780471098379, Pages: 868.
Whelan, P.M. and M.J. Hodgson, 1974. Essential Pre-University Physics. 3rd Edn., John Murray Albemarle Street London, London, ISBN: 0719520479, pp: 168-169.