Research Journal of Applied Sciences

Year: 2011
Volume: 6
Issue: 3
Page No. 140 - 142

Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode

Authors : H. Arabshahi and D. Ghodsi Nahri

References

Arabshahi, H., M.R. Halvati and M.R., Rokn-Abadi, 2008. Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application. Braz. J. Phys., 38: 293-296.
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Besikci, B., M. Bakir and U. Tanatar, 2000. Hot electron simulation devices. J. Applied. Phys., 88: 1243-1247.

Jacoboni, C. and L. Reggiani, 1983. The Monte Carlo method for the solution of charge transport insemiconductors with applications to covalent materials. Rev. Modern Phys., 55: 645-705.
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Martienssen, W. and H. Warlimont, 2005. Springer Handbook of Condensed Matter and Materials Data. 1st Edn., Springer Publishing, New York, ISBN-13: 978-3540443766, pp: 1120.

Ridley, B.K., 1993. Quantum Processes in Semiconductors. Clarendon Press, Oxford.

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