Authors : Shaymaa H. Nawfal and Karrar A. Hammoodi
Abstract: In this study, Porous Silicon (PSi) samples are prepared by electrochemical etching method of p-type silicon wafers of 100 orientation with different etching current densities (15, 17, 19 and 21 mAcm–2) for 15 min etching time and different etching times (15, 17, 19 and 21 min) for 15 mAcm–2 etching current density with fixed electrolyte solution (40% HF: 99.98% CH3OH) (1:1). The photovoltaic properties is described by spectral Responsivity (Rλ) and specific Detectivity (Dλ*). The photovoltaic measurements of PSi samples showed that the increasing in both current densities and etching times caused a blue shift in the peak of the responsivity and the maximum responsivity 0.41 A/W appears at 800 nm despite the fact that this region is far from the cutoff wavelength in order to coincide with mass action law.
Shaymaa H. Nawfal and Karrar A. Hammoodi, 2019. Study of Photovoltaic Properties of Porous Silicon. Journal of Engineering and Applied Sciences, 14: 10650-10653.