Journal of Modern Mathematics and Statistics
Year:
2011
Volume:
5
Issue:
1
Page No.
21 - 24
A New Method for Solutions of Differential Equation by Fast Fourier Transform
Authors :
H.Arabshahi
References
Brennan, K., 1988. Theory of high-field electronic transport in bulk ZnS and ZnSe. J. Applied Phys., 64: 4024-4030.
CrossRef | Chattopadhyay, D. and H.J. Queisser, 1981. Monte carlo simulation in SiC devices. Rev. Modern Phys., 53: 234-239.
Chen, Y., D.M. Bagnall, H.J. Koh, K.T. Park, Z.Q. Zhu and T. Yao, 1998. Hall mobility in SiC material. J. Applied Phys., 84: 3912-3918.
Di, K. and K. Brennan, 1991. Comparison of electron transport properties in 4C-SiC and 6H-SiC. J. Applied Phys., 69: 3097-3104.
Gonze, X., J.M. Beuken, R. Caracas, F. Detraux and M. Fuchs
et al., 2002. First-principles computation of material properties: The ABINIT software project. Comput. Mater. Sci., 25: 478-492.
CrossRef | Look, D.C., D.C. Reynolds, J.R. Sizelove and W.C. Harsch, 1998. Effect of plasmon scattering in semiconductor devices. Solid Stat. Commun., 105: 399-404.
Makino, T., Y. Segawa and A.C. Ohtomo, 2001. Electron mobility in high electric field application. Applied Phys. Lett., 78: 1237-1237.