Abstract: Various kinds of charge storage cells are discussed as a result of examining many samples with different structures. C-V, I-V and R-V measurements of the structures confirm the storage capability of MIOS devices. The examined structures reveal three kinds of memory actions. First one is the charge storage capability which can be concluded from (C-V) curve shifting as the device exposed to certain stress for a certain time. Second is the electronic switching that is demonstrated by the fact that switching between ON and OFF states and back to original state can only be obtained by inverting the polarity of the applied bias voltage. Third kind of memory action is that the device can be switched into a variety of stable intermediate resistance states. The new resistance state is determined by the height of the programming pulse applied to the device. This memory action is noticed from R-V characteristic and known as a nonvolatile analogue memory behavior.
Wagah. F. Mohamad and L.S. Ali , 2006. Digital and Analogue Storage Capability of Al/SIO2/SI Structures. Asian Journal of Information Technology, 5: 1-4.