Authors : M.G. Zebaze Kana, A.A. Oberafo and R.K. Odunaike
Abstract: Investigations have been carried out at temperatures between 123 and 300 K on as deposited, vacuum evaporated Al-Ge-Au sandwich structure samples fabricated on Al support discs. The sandwiched, evaporated Ge layers were vacuum-deposited in either one or two steps and of various thicknesses while the Al and Au contacts on either side were each vacuum-deposited in one step. Furthermore for the two-step Ge depositions, the first Ge layer was exposed to air at room temperature for an hour before the second layer was deposited. All the samples showed good ohmic behaviour. The specific resistance (Rs) of the Al-Ge-Au layers increased as the thickness of the sandwiched Ge layer increased but decreased as the temperature increased. The dependence of Rs on the temperature indicated semiconducting behaviour in the Ge layer. It was also found that for a given overall thickness, Rs increased as the number of steps increased while there was no significant change in Rs for samples of same overall Ge thickness deposited in the same number of steps.
M.G. Zebaze Kana, A.A. Oberafo and R.K. Odunaike, 2010. Effects of Two-Step Deposition on Current Transport in Al-Ge-Au Sandwich Structures. Journal of Engineering and Applied Sciences, 5: 327-331.