Journal of Engineering and Applied Sciences

Year: 2019
Volume: 14
Issue: 7 SI
Page No. 10067 - 10074

Optical Properties Study of II-VI Semiconductors NPs Prepared by Laser Ablation in Liquid Technique

Authors : Lamis Faaz Nassir

Abstract: The use off laser ablation to generate nanoparticle of a solid target in a liquid environment is an fast, easy and "green" method to product a large scale of nanomaterials with tailored properties. In this research we have been prepared II-VI nanoparticles by using laser ablation in liquid technique by Nd:YAG laser [pulse, width of, 9 nsec, repetition rate of 1 Hz, λ = 1064 nm with different laser energy and laser fluence, respectively (60, 100, 140, 180 mJ/pulse), (0.433, 0.722, 1.011, 1.299, J/cm2). The synthesized II-VI NPs thin films of thickness (320±10 nm) have been characterized by (AFM) and UV-VIS, spectroscopy. The (AFM) images results had showed that average grain size of II-VI NPs change between of 65.42-90.38 nm. The major optical parameters like extinction coefficients (k), absorption coefficient (α) and band gap have been calculated from the, transmission spectra. The probable optical transition in these films is found to be direct and allowed where band gap of II-VI NPs decreased from 2.5-2.15 eV with increase the grain size and laser fluence. By using the reflectance and transmittance spectra, the refractive indices (n), real, dielectric constant (εReal) and imaginary dielectric constant (εIm) have been calculated and discussed graphically.

How to cite this article:

Lamis Faaz Nassir , 2019. Optical Properties Study of II-VI Semiconductors NPs Prepared by Laser Ablation in Liquid Technique. Journal of Engineering and Applied Sciences, 14: 10067-10074.

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