Research Journal of Applied Sciences

Year: 2016
Volume: 11
Issue: 7
Page No. 463 - 468

Design of 3.1-10.6 GHz Ultra-Wideband Cmos Low Noise Amplifier for Wireless Applications

Authors : Meysam Azimi-Roein and Abbas Golmakani

Abstract: Two ultra wideband Low Noise Amplifiers (LNAs) are presented. A common source topology is adopted for input stage to achieve wideband input matching while a cascode stage is used as the second stage to provide power gain at high frequencies. The first work is a LNA with resistive shunt feedback. It achieves a maximum power gain of 10.5 dB, a bandwidth of 10 GHz and 8.7 dB minimum noise fiqure. The power consumption is 14.28 mW from a 1.8 V supply. The second work is common source with a reuse pmos current source.

How to cite this article:

Meysam Azimi-Roein and Abbas Golmakani, 2016. Design of 3.1-10.6 GHz Ultra-Wideband Cmos Low Noise Amplifier for Wireless Applications. Research Journal of Applied Sciences, 11: 463-468.

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