Journal of Engineering and Applied Sciences

Year: 2017
Volume: 12
Issue: 7
Page No. 1931 - 1934

Temperature Measurement Method Development for Light-Emitting Diode Crystal

Authors : Myshonkov Alexander Borisovich and Zheleznikova Olga Evgenievna

References

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Chhajed, S., Y. Xi, Y.L. Li, T. Gessmann and E.F. Schubert, 2005. Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes. J. Appl. Phys., Vol. 97,

Chitnis, A., J. Sun, V. Mandavilli, R. Pachipulusu and S. Wu et al., 2002. Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm. Appl. Phys. Lett., 81: 3491-3493.
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Cree News, 2014. Cree first to break 300 lumens-per-watt barrier. Durham, Carolina. www.cree.com/News-and-Events/Cree-News/Press-Releases/2014/March/300LPW-LED-barrier

Kositsyn, A.A. and A.B. Myshonkov, 2013. Development of a device and a technique to determine the temperature of the LED P-N-junction in real operating conditions. Educ. Exp. Educ., 3: 51-52.

Nikiforov, S.G., 2005. Temperature during the life and work of light-emitting diodes. Compon. Technol., 9: 48-54.

Schubert, E.F., 2006. Light-Emitting Diodes. Cambridge University Press, Cambridge, UK., Pages: 431.

Shibaykin, S.D. and A.B. Myshonkov, 2011. Approximation of self-heating curves of a LED crystal by a flowing current. Branch Aspects Eng. Sci., 12: 23-24.

Shibaykin, S.D. and A.B. Myshonkov, 2012. Modeling of thermal processes in a LED. Branch Aspects Eng. Sci., 8: 29-35.

Winnewisser, C., J. Schneider, M. Borsch and H.W. Rotter, 2001. In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation. J. Appl. Phys., 89: 3091-3094.
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Xi, Y. and E.F. Schubert, 2004. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Appl. Phys. Lett., 85: 2163-2165.
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