Journal of Engineering and Applied Sciences
Year:
2017
Volume:
12
Issue:
7
Page No.
1931 - 1934
References
Ashryatov, A.A., A.B. Myshonkov and S.A. Mikaeva, 2011. Measurement of crystal temperature among low-power LEDs. Autom. Mod. Technol., 3: 10-13.
Chhajed, S., Y. Xi, Y.L. Li, T. Gessmann and E.F. Schubert, 2005. Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes. J. Appl. Phys., Vol. 97,
Chitnis, A., J. Sun, V. Mandavilli, R. Pachipulusu and S. Wu
et al., 2002. Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm. Appl. Phys. Lett., 81: 3491-3493.
Direct Link | Cree News, 2014. Cree first to break 300 lumens-per-watt barrier. Durham, Carolina. www.cree.com/News-and-Events/Cree-News/Press-Releases/2014/March/300LPW-LED-barrier
Kositsyn, A.A. and A.B. Myshonkov, 2013. Development of a device and a technique to determine the temperature of the LED P-N-junction in real operating conditions. Educ. Exp. Educ., 3: 51-52.
Nikiforov, S.G., 2005. Temperature during the life and work of light-emitting diodes. Compon. Technol., 9: 48-54.
Schubert, E.F., 2006. Light-Emitting Diodes. Cambridge University Press, Cambridge, UK., Pages: 431.
Shibaykin, S.D. and A.B. Myshonkov, 2011. Approximation of self-heating curves of a LED crystal by a flowing current. Branch Aspects Eng. Sci., 12: 23-24.
Shibaykin, S.D. and A.B. Myshonkov, 2012. Modeling of thermal processes in a LED. Branch Aspects Eng. Sci., 8: 29-35.
Winnewisser, C., J. Schneider, M. Borsch and H.W. Rotter, 2001. In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation. J. Appl. Phys., 89: 3091-3094.
Direct Link | Xi, Y. and E.F. Schubert, 2004. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Appl. Phys. Lett., 85: 2163-2165.
CrossRef | Direct Link |