Research Journal of Applied Sciences

Year: 2011
Volume: 6
Issue: 4
Page No. 232 - 239

A New Study on Calculation of Electron Transport Characteristics in Semiconductor Materials

Authors : H. Arabshahi and F. Sarlak


Brooks, H., 1951. Scattering by ionized impurities in semiconduc-tors. Phys. Rev., 83: 879-879.

Jacoboni, C. and P. Lugli, 1989. The Monte Carlo Method for Semiconductor and Device Simulation. Springer-Verlag, New York.

Madelung, O., 1978. Introduction to Solid-State Theory. Springer, Heidelberg, pp: 486.

Moglestue, C., 1993. Monte Carlo Simulation of Semiconductor Devices. 1st Edn., Chapman and Hall, Netherlands, ISBN-13: 9780412477706, pp: 336.

Ridley, B.K., 1997. Electrons and Phonons in Semiconductor Multilayers. Cambridge University Press, New York, pp: 352.

Rode, D.L. and D.K. Gaskill, 1995. Electron hall mobility of n-GaN. Applied Phys. Lett., 66: 1972-1973.

Tsen, K.T., D.K. Ferry, A. Botchkarev, B. Suerd, A. Salvador and H. Morkoc, 1997. Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN. Applied Phys. Lett., 71: 1852-1853.
CrossRef  |  Direct Link  |  

Design and power by Medwell Web Development Team. © Medwell Publishing 2023 All Rights Reserved